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Package Marking and Ordering Information
Part Number
FDD390N15ALZ
Top Mark
FDD390N15ALZ
Package
DPAK
Packing Method
Tape and Reel
Reel Size
330 mm
Tape Width
16 mm
Quantity
2500 units
Electrical Characteristics T C = 25 o C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BV DSS
Drain to Source Breakdown Voltage
I D = 250 ? A, V GS = 0 V
150
-
-
V
? BV DSS
/ ? T J
I DSS
I GSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
I D = 250 ? A, Referenced to
V DS = 120 V, V GS = 0 V
V DS = 120 V, T C = 125 o C
V GS = ±20 V, V DS = 0 V
25 o C
-
-
-
-
0.15
-
-
-
-
1
500
±10
V/ o C
? A
? A
On Characteristics
V GS(th)
R DS(on)
g FS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
V GS = V DS , I D = 250 ? A
V GS = 10 V, I D = 26 A
V GS = 4.5 V, I D = 20 A
V DS = 10 V, I D = 26 A
1.4
-
-
-
-
33.4
42.2
50
2.8
42
64
-
V
m ?
m ?
S
Dynamic Characteristics
C iss
C oss
C rss
C oss(er)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Energy Related Output Capacitance
V DS = 75 V, V GS = 0 V,
f = 1 MHz
V DS = 75 V, V GS = 0 V
-
-
-
-
1323
93
4
165
1760
120
6
-
pF
pF
pF
pF
Q g(tot)
Q g(tot)
Q gs
Total Gate Charge at 10V
Total Gate Charge at 5V
Gate to Source Gate Charge
V GS = 10 V
V GS = 4.5 V
V DS = 75 V,
I D = 26 A
-
-
-
17.6
8.1
4.7
39
10.5
-
nC
nC
nC
Q gd
ESR
Gate to Drain “Miller” Charge
Equivalent Series Resistance (G-S)
f = 1 MHz
(Note 4)
-
-
2.3
1.48
-
-
nC
?
Switching Characteristics
t d(on)
t r
t d(off)
t f
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V DD = 75 V, I D = 26 A,
V GS = 10 V, R G = 4. 7 ?
(Note 4)
-
-
-
-
12.8
9.3
26.9
3.2
35.6
28.6
63.8
16.4
ns
ns
ns
ns
Drain-Source Diode Characteristics
I S
I SM
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
-
-
-
-
26
104
A
A
V SD
t rr
Q rr
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0 V, I SD = 26 A
V GS = 0 V, I SD = 26 A,
dI F /dt = 100 A/ ? s
-
-
-
-
70
169
1.25
-
-
V
ns
nC
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 3 mH, I AS = 6.75 A, starting T J = 25 ? C.
3. I SD ?? 26 A, di/dt ? 200 A/ ? s, V DD ? BV DSS , starting T J = 25 ? C.
4. Essentially independent of operating temperature typical characteristics.
?2012 Fairchild Semiconductor Corporation
FDD390N15ALZ Rev. C4
2
www.fairchildsemi.com
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